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technologia: Dynamic random-access memory

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In 2017, DRAM had a 47% increase in the price-per-bit, the largest jump in 30 years since a 45% jump in 1988.

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Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a microscopic capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (as opposed to non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence. DRAM typically takes the form of an integrated circuit chip, which can consist of dozens to billions of DRAM memory cells. DRAM chips are widely used in digi…

Kategoria: technologia

Rodzina: technologia

Jakość źródła: 65/100

Próby weryfikacji: 3

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High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM), initially developed by Samsung, AMD and SK Hynix. It is often used in conjunction with performance-oriented graphics accelerators, network devices, FPGAs and ASICs; some CPUs use HBM as on-package cache or RAM, such as the NEC SX-Aurora TSUBASA and Fujitsu A64FX. The first HBM memory chip was produced by SK Hynix in 2013, and the first devices shipped with HBM were the AMD Fiji GPUs in 2015. HBM was adopted by JEDEC as an industry standard in October 2013. The second generation, HBM2, was accepted by JEDEC in January 2016. JEDEC officially announced the HBM3 standard o…

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Wikipedia ENpomocnicze

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Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a microscopic capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would so…

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